onsemiUnited States
IGBT - 650 V 100 A FS3 FOR EV TR
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 660 W |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-247-3 |
| Other | |
| Base Product Number | AFGY100 |
| Gate Charge | 109 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mfr | onsemi |
| Product Status | Active |
| Reverse Recovery Time (trr) | 105 ns |
| Series | - |
| Switching Energy | 5.1mJ (on), 2.7mJ (off) |
| Td (on/off) @ 25°C | 36ns/78ns |
| Test Condition | 400V, 100A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 100A |