All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage200 V
Collector current700 mAMax
DC current gain200100mA
Power1.5 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)700 mA
Power - Max1.5 W
Voltage - Collector Emitter Breakdown (Max)200 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 5V
Frequency - Transition120MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126ML
Other
Mfronsemi
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic220mV @ 35mA, 350mA

Documents