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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current8 A
On-resistance25 mΩMax · 8A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Power Dissipation (Max)3.1W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberAO44
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 50 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs25mOhm @ 8A, 10V
SeriesSDMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

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