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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current5 A
On-resistance49 mΩMax · 5A
Gate threshold voltage1.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Power Dissipation (Max)2W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberAO47
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs9.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds952 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs49mOhm @ 5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.3V @ 250µA

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