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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current7 A
On-resistance27 mΩMax · 7A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-74, SOT-457
Supplier Device Package6-TSOP
Other
Base Product NumberAO640
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs27mOhm @ 7A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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