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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current5 A
On-resistance31 mΩMax · 5A
Gate threshold voltage2.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.25W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseSC-74, SOT-457
Supplier Device Package6-TSOP
Other
Base Product NumberAO640
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs31mOhm @ 5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

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