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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current2 A
On-resistance62 mΩMax · 2A
Gate threshold voltage1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)350mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6
Other
Base Product NumberAO740
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 10 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs62mOhm @ 2A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

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