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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage75 V
Continuous drain current21.5 ~ 140 A
On-resistance2.4 mΩMax · 20A
Gate threshold voltage3.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C21.5A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.1W (Ta), 500W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2Pak)
Other
Base Product NumberAOB270
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10830 pF @ 37.5 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.4mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 250µA

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