Alpha & Omega Semiconductor Inc.United States
MOSFET N-CH 80V 18.5A/105A TO263
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current18.5 ~ 105 A
On-resistance3.2 mΩMax · 20A
Gate threshold voltage3.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta), 105A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 272.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2Pak) |
| Other | |
| Base Product Number | AOB282 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7765 pF @ 40 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |