MOSFET P-CH 60V 8A/78A TO263
沟道P 沟道
耐压60 V
连续漏极电流8 ~ 78 A
导通电阻16.5 mΩ
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沟道P 沟道
耐压60 V
连续漏极电流8 ~ 78 A
导通电阻16.5 mΩ最大 · 20A
阈值电压2.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 78A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 187W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2Pak) |
| 其他 | |
| Base Product Number | AOB411 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 30 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |