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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current4.5 A
On-resistance23 mΩMax · 1.5A
Gate threshold voltage1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)550mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case4-SMD, No Lead
Supplier Device Package4-AlphaDFN (1.57x1.57)
Other
Base Product NumberAOC24
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1842 pF @ 10 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs23mOhm @ 1.5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

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