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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage40 V
Continuous drain current24 A
On-resistance45 mΩMax · 12A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (DPAK)
Other
Base Product NumberAOD41
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 20 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs45mOhm @ 12A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

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