AOD536

AOD536

不推荐用于新设计单 FET,MOSFETTO-252

MOSFET N-CH 30V 20.5A

沟道N 沟道
耐压30 V
连续漏极电流20.5 ~ 46 A
导通电阻8.5 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流20.5 ~ 46 A
导通电阻8.5 mΩ最大 · 20A
阈值电压2.2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C20.5A (Ta), 46A (Tc)
Drain to Source Voltage (Vdss)30 V
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (DPAK)
其他
Base Product NumberAOD53
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1140 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA

器件图片

技术资料