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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current5 A
On-resistance1.6 ΩMax · 2.5A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)104W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (DPAK)
Other
Base Product NumberAOD5
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds670 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

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