Alpha & Omega Semiconductor Inc.United States
MOSFET N-CH 650V 7A TO252
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current7 A
On-resistance650 mΩMax · 3.5A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 89W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| Other | |
| Base Product Number | AOD7 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| Series | aMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Documents
DatasheetDatasheet · 635.2 KB · 2026-09-22Package DrawingPackage Drawing · 417.4 KB · 2026-09-22Package DrawingPackage Drawing · 277.4 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 122.2 KB · 2026-09-22Package DrawingPackage Drawing · 112.9 KB · 2026-09-22OtherOther · 185.6 KB · 2026-09-21
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