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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current21 ~ 85 A
On-resistance3.2 mΩMax · 20A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C21A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10V, 20V
Power Dissipation (Max)2.3W (Ta), 75W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case3-PowerSMD, Flat Leads
Supplier Device PackageUltraSO-8™
Other
Base Product NumberAOL14
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 12.5 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 20V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

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