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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current4.5 ~ 28 A
On-resistance37 mΩMax · 10A
Gate threshold voltage2.7 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C4.5A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.9W (Ta), 75W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case3-PowerSMD, Flat Leads
Supplier Device PackageUltraSO-8™
Other
Base Product NumberAOL14
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 50 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs37mOhm @ 10A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.7V @ 250µA

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