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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current16 ~ 65 A
On-resistance4.2 mΩMax · 20A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C16A (Ta), 65A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.1W (Ta), 100W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case3-PowerSMD, Flat Leads
Supplier Device PackageUltraSO-8™
Other
Base Product NumberAOL17
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5120 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
SeriesSRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2.5V @ 250µA

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