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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current4.5 A
On-resistance72 mΩMax · 4.5A
Gate threshold voltage2.8 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.8W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-DFN (2x2)
Other
Base Product NumberAON22
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds415 pF @ 50 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs72mOhm @ 4.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 250µA

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