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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current8 A
On-resistance32 mΩMax · 8A
Gate threshold voltage2.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.8W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-DFN (2x2)
Other
Base Product NumberAON24
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs32mOhm @ 8A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 250µA

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