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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current8 A
On-resistance21 mΩMax · 8A
Gate threshold voltage1.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)2.8W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-DFN (2x2)
Other
Base Product NumberAON24
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds813 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs21mOhm @ 8A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

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