Alpha & Omega Semiconductor Inc.United States
MOSFET P-CH 20V 3.4A 8DFN
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current3.4 A
On-resistance90 mΩMax · 3.4A
Gate threshold voltage1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.7W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 8-DFN (3x2) |
| Other | |
| Base Product Number | AON470 |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 10 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.4A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
Documents
DatasheetDatasheet · 447.7 KB · 2026-09-21Quality & ReliabilityQuality & Reliability · 302.6 KB · 2026-09-22Package DrawingPackage Drawing · 288.9 KB · 2026-09-22Package DrawingPackage Drawing · 111.3 KB · 2026-09-22Package DrawingPackage Drawing · 103.1 KB · 2026-09-22OtherOther · 185.6 KB · 2026-09-21
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