Alpha & Omega Semiconductor Inc.United States
MOSFET 2N-CH 30V 7.2A 6DFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.6W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-WFDFN Exposed Pad |
| Supplier Device Package | 6-DFN-EP (2x5) |
| Other | |
| Base Product Number | AON5802 |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 7A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Documents
DatasheetDatasheet · 656.5 KB · 2026-09-21Package DrawingPackage Drawing · 471.1 KB · 2026-09-22Package DrawingPackage Drawing · 308.2 KB · 2026-09-22Package DrawingPackage Drawing · 110.8 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 82.1 KB · 2026-09-22OtherOther · 185.6 KB · 2026-09-21
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