MOSFET P-CH 30V 21A/85A 8DFN
沟道P 沟道
耐压30 V
连续漏极电流21 ~ 85 A
导通电阻3.1 mΩ
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沟道P 沟道
耐压30 V
连续漏极电流21 ~ 85 A
导通电阻3.1 mΩ最大 · 20A
阈值电压2.2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 85A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.3W (Ta), 83W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerSMD, Flat Leads |
| Supplier Device Package | 8-DFN (5x6) |
| 其他 | |
| Base Product Number | AON640 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9120 pF @ 15 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |