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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage80 V
Continuous drain current11 ~ 65 A
On-resistance9.6 mΩMax · 10A
Gate threshold voltage3.7 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C11A (Ta), 65A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Power Dissipation (Max)2.5W (Ta), 83W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerSMD, Flat Leads
Supplier Device Package8-DFN (5x6)
Other
Base Product NumberAON644
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 40 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs9.6mOhm @ 10A, 10V
SeriesSDMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3.7V @ 250µA

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