Alpha & Omega Semiconductor Inc.United States
MOSFET N-CH 250V 2.2A/14A 8DFN
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage250 V
Continuous drain current2.2 ~ 14 A
On-resistance170 mΩMax · 10A
Gate threshold voltage4.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta), 14A (Tc) |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 2W (Ta), 83W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerSMD, Flat Leads |
| Supplier Device Package | 8-DFN (5x6) |
| Other | |
| Base Product Number | AON645 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 25 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |