MOSFET N-CH 30V 84A/200A 8DFN
沟道N 沟道
耐压30 V
连续漏极电流84 ~ 200 A
导通电阻620 µΩ
全部替代型号
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沟道N 沟道
耐压30 V
连续漏极电流84 ~ 200 A
导通电阻620 µΩ最大 · 20A
阈值电压2.2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 84A (Ta), 200A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 7.3W (Ta), 208W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Supplier Device Package | 8-DFN (5x6) |
| 其他 | |
| Base Product Number | AON656 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 325 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 15 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 0.62mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |