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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current36 ~ 85 A
On-resistance3.2 mΩMax · 20A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C36A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)6.2W (Ta), 48W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Supplier Device Package8-DFN (5x6)
Other
Base Product NumberAON657
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3290 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2V @ 250µA

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