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技术参数

电源
Current - Continuous Drain (Id) @ 25°C18A, 31A
Drain to Source Voltage (Vdss)25V
Power - Max2W, 2.2W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-DFN-EP (5x6)
其他
Base Product NumberAON692
Configuration2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2340pF @ 12.5V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.7V @ 250µA

技术资料