AON7140

在产单 FET,MOSFET8-DFN-EP

MOSFET N-CHANNEL 40V 50A 8DFN

沟道N 沟道
耐压40 V
连续漏极电流50 A
导通电阻2.3 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流50 A
导通电阻2.3 mΩ最大 · 20A
阈值电压2.4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)46W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-DFN-EP (3.3x3.3)
其他
Base Product NumberAON714
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3350 pF @ 20 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs2.3mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

技术资料