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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current20 ~ 40 A
On-resistance5 mΩMax · 20A
Gate threshold voltage2.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C20A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.1W (Ta), 36W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-PowerVDFN
Supplier Device Package8-DFN-EP (3x3)
Other
Base Product NumberAON72
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 250µA

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