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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current37 ~ 50 A
On-resistance3 mΩMax · 20A
Gate threshold voltage1.8 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C37A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)6.2W (Ta), 83W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-DFN-EP (3.3x3.3)
Other
Base Product NumberAON72
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3554 pF @ 12.5 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.8V @ 250µA

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