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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage80 V
Continuous drain current20 ~ 50 A
On-resistance8.5 mΩMax · 20A
Gate threshold voltage3.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C20A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)6.3W (Ta), 83W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-DFN-EP (3.3x3.3)
Other
Base Product NumberAON72
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 40 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 250µA

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