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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current12 ~ 35 A
On-resistance14 mΩMax · 9A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C12A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)3.1W (Ta), 29W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-DFN-EP (3x3)
Other
Base Product NumberAON740
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

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