All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current10 ~ 18 A
On-resistance20 mΩMax · 10A
Gate threshold voltage2.6 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C10A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.1W (Ta), 11W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device Package8-DFN-EP (3x3)
Other
Base Product NumberAON740
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds448 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.6V @ 250µA

Documents