MOSFET P-CH 30V 16A/32A 8DFN
沟道P 沟道
耐压30 V
连续漏极电流16 ~ 32 A
导通电阻8.5 mΩ
全部替代型号
查看完整报告技术参数
沟道P 沟道
耐压30 V
连续漏极电流16 ~ 32 A
导通电阻8.5 mΩ最大 · 16A
阈值电压2.7 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 96W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN-EP (3x3) |
| 其他 | |
| Base Product Number | AON740 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 15 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 16A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |