Alpha & Omega Semiconductor Inc.United States

AON7423

Not For New DesignsSingle FETs, MOSFETs8-DFN-EP

MOSFET P-CH 20V 28A/50A 8DFN

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current28 ~ 50 A
On-resistance5 mΩMax · 20A
Gate threshold voltage900 mVMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C28A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Power Dissipation (Max)6.2W (Ta), 83W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-DFN-EP (3.3x3.3)
Other
Base Product NumberAON742
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5626 pF @ 10 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Documents

DatasheetDatasheet · 716.2 KB · 2026-09-21DatasheetDatasheet · 290.2 KB · 2026-09-21Package DrawingPackage Drawing · 395.9 KB · 2026-09-22Package DrawingPackage Drawing · 277.5 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 122.9 KB · 2026-09-22Package DrawingPackage Drawing · 84.8 KB · 2026-09-22OtherOther · 185.6 KB · 2026-09-21
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