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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current3.3 ~ 8 A
On-resistance145 mΩMax · 3A
Gate threshold voltage3.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C3.3A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Power Dissipation (Max)3.1W (Ta), 16.7W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device Package8-DFN-EP (3x3)
Other
Base Product NumberAON744
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds285 pF @ 30 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs145mOhm @ 3A, 10V
SeriesSDMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 250µA

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