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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current48 ~ 50 A
On-resistance1.8 mΩMax · 20A
Gate threshold voltage1.2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C48A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Power Dissipation (Max)6.2W (Ta), 83.3W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-DFN-EP (3.3x3.3)
Other
Base Product NumberAON75
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4175 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.8mOhm @ 20A, 10V
SeriesAlphaMOS
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA

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