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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current31 ~ 50 A
On-resistance3.5 mΩMax · 20A
Gate threshold voltage2.1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C31A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)6.2W (Ta), 83W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-DFN-EP (3.3x3.3)
Other
Base Product NumberAON77
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4600 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V
SeriesSRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2.1V @ 250µA

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