All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current73 ~ 400 A
On-resistance730 µΩMax · 20A
Gate threshold voltage1.6 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C73A (Ta), 400A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)6.2W (Ta), 250W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerSMD, Flat Leads
Supplier Device Package8-DFN (5x6)
Other
Base Product NumberAONS321
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15200 pF @ 12.5 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs0.73mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.6V @ 250µA

Documents