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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C-
Drain to Source Voltage (Vdss)60V
Power - Max2.5W
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-PDIP
Other
Base Product NumberAOP60
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 30V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs56mOhm @ 4.7A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

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