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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current14 A
On-resistance11.5 mΩMax · 14A
Gate threshold voltage2.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.1W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberAOSP213
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1995 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs11.5mOhm @ 14A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id2.3V @ 250µA

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