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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage80 V
Continuous drain current20.5 ~ 140 A
On-resistance2.7 mΩMax · 20A
Gate threshold voltage3.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C20.5A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberAOT280
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11135 pF @ 40 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs2.7mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 250µA

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