Alpha & Omega Semiconductor Inc.United States
MOSFET N-CH 100V 105A TO220
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current14.5 ~ 105 A
On-resistance4.5 mΩMax · 20A
Gate threshold voltage3.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta), 105A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 300W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Other | |
| Base Product Number | AOT292 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6775 pF @ 50 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
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DatasheetDatasheet · 688.6 KB · 2026-09-29DatasheetDatasheet · 480.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 122.9 KB · 2026-09-22Package DrawingPackage Drawing · 459.9 KB · 2026-09-21OtherOther · 185.6 KB · 2026-09-21Package DrawingPackage Drawing · 91.5 KB · 2026-09-21
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