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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current15.5 ~ 105 A
On-resistance4.7 mΩMax · 20A
Gate threshold voltage2.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15.5A (Ta), 105A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.1W (Ta), 150W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberAOT44
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5600 pF @ 20 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.7mOhm @ 20A, 10V
SeriesSDMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 250µA

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