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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage75 V
Continuous drain current9 ~ 127 A
On-resistance11.3 mΩMax · 30A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C9A (Ta), 127A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1.9W (Ta), 417W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberAOT47
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3370 pF @ 30 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs11.3mOhm @ 30A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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