Alpha & Omega Semiconductor Inc.United States
MOSFET N-CH 80V 11A/105A TO220
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current11 ~ 105 A
On-resistance7.2 mΩMax · 20A
Gate threshold voltage3.7 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 105A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 333W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Other | |
| Base Product Number | AOT482 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4870 pF @ 40 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V |
| Series | SDMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |