Alpha & Omega Semiconductor Inc.United States

AOTF292L

ActiveSingle FETs, MOSFETsTO-220F

MOSFET N-CH 100V 70A TO220F

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current70 A
On-resistance4.5 mΩMax · 20A
Gate threshold voltage3.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)47W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F
Other
Base Product NumberAOTF292
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6775 pF @ 50 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
SeriesAlphaSGT™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 250µA

Documents

DatasheetDatasheet · 688.6 KB · 2026-09-29DatasheetDatasheet · 480.0 KB · 2026-09-22OtherOther · 487.9 KB · 2026-09-22Package DrawingPackage Drawing · 373.8 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 122.7 KB · 2026-09-22Package DrawingPackage Drawing · 13.6 KB · 2026-09-22
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