All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage60 V
Continuous drain current5.4 ~ 24 A
On-resistance40 mΩMax · 20A
Gate threshold voltage2.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5.4A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.16W (Ta), 43W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FL
Other
Base Product NumberAOTF40
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2953 pF @ 30 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs40mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Documents